For the first time received a one-dimensional semiconductor material

Scientists from NUST “MISA” under the guidance of the doctor of physical and mathematical sciences Pavel Sorokin had a theoretical part of the study, which allowed for the first time in the world to get out of synthetic material Ta-Pd (Pt) -Se new dimensional semiconductor material. The experimental part of the work carried out by scientists at Tulane University in the US, led by Professor Jan Wei (Jiang Wei). The study is published in the journal Nano Letters.

Create a one-dimensional semiconductor traditional method - cutting two-dimensional materials - it was not possible, so the collaboration MISA and Tulane University approached the problem from a totally different side. It was decided to look for a crystal consisting of one-dimensional nanostructures weakly coupled (as in the case of graphite, consisting of graphene sheets) to apply the same method micromechanical cleavage ( “adhesive tape” method). For this purpose we come Ta2Pd3Se8 compound (thallium-platinum-selenium) and Ta2Pt3Se8 (thallium, palladium, selenium), synthesized more than 30 years ago, but is still not widely used.

Splitting Ta-Pd (Pt) -Se yielded nanowires consisting of several nanoribbons that have a direct band gap of about 1 electron volt (eV). The researchers have created nanostructures on the basis of the transistor in which the experimentally measured mobility of charge carriers was 80 CM2B-1s-1.

The use of such material will reduce the microelectronic circuitry to nanoscale and speed of the devices due to dimensional and surface effects.

6 September 2016

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